Title :
A new CVD tungsten nitride diffusion barrier for Cu interconnection
Author :
Sun, S.C. ; Tsai, M.H. ; Chiu, H.T. ; Chuang, S.H.
Author_Institution :
Nat. Nano Device Lab., Hsinchu, Taiwan
Abstract :
This paper reports the investigation of a newly developed WNx film by metalorganic chemical vapor deposition (MOCVD). The WNx material provided an excellent diffusion barrier for Cu metallization.
Keywords :
CVD coatings; copper; diffusion barriers; metallisation; tungsten compounds; Cu; Cu interconnection; Cu metallization; WN; WNx film; metalorganic chemical vapor deposition; tungsten nitride diffusion barrier; Chemical vapor deposition; Inorganic materials; MOCVD; Metallization; Tungsten;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507788
