DocumentCode
2127349
Title
Imaging of Si-crystal lattice by phase-contrast X-ray microscopy [for Avogadro constant determination]
Author
Bergamin, A. ; Cavagnero, G. ; Mana, G. ; Massa, E. ; Zosi, G.
Author_Institution
Ist. di Metrol., CNR, Torino, Italy
fYear
2000
fDate
14-19 May 2000
Firstpage
107
Lastpage
108
Abstract
X-ray Moire topography has been improved by the application of phase modulation, imaging, and computing to provide images of lattice distortion with unprecedented sensitivity inside near-perfect Si monocrystals. The technique here presented is based on differential phase modulation to permit the detection of the spatially varying phase shift at the output of an X-ray interferometer of the triple Laue type by the use of a multi-element detector. Information was obtained about the degree of perfection of the crystals being used in the determination of the Avogadro constant and about the effects of machining and etching on the performances of X-ray interferometers.
Keywords
Constants; Electromagnetic wave interferometry; Lattice constants; Phase modulation; Silicon; X-ray topography; Avogadro constant; Si; X-ray Moire topography; X-ray interferometer; crystal lattice imaging; degree of crystal perfection; differential phase modulation; etching effects; interatomic distance mapping; interferometer performance; machining effects; multi-element detector; phase-contrast X-ray microscopy; spatially varying phase shift; surface fitting; triple Laue type; Lattices; Microscopy; Optical imaging; Phase detection; Phase distortion; Phase modulation; Surfaces; X-ray detection; X-ray detectors; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location
Sydney, NSW, Australia
Print_ISBN
0-7803-5744-2
Type
conf
DOI
10.1109/CPEM.2000.850900
Filename
850900
Link To Document