DocumentCode
2127381
Title
High-reliability interconnects using Cu-Zr alloy for future LSIs
Author
Igarashi, Y. ; Ito, T.
Author_Institution
Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
76
Lastpage
77
Abstract
We proposed use of Cu-Zr alloy interconnects for extension of the EM lifetime of Cu interconnects. The fabricated Cu-Zr interconnects showed low resistivity (1.9-2.3 /spl mu//spl Omega//spl middot/cm) and high EM activation energy (1.37 eV). The high EM activation energy in comparison with pure-Cu interconnects is suitable for future logic devices, which will be operated with high current density (>1MA/cm/sup 2/) at high temperature (>100/spl deg/C).
Keywords
copper alloys; current density; electromigration; integrated circuit interconnections; integrated circuit reliability; large scale integration; zirconium alloys; 1.37 eV; CuZr; EM activation energy; EM lifetime; IC interconnects; LSI; current density; logic devices; reliability; resistivity; Conductivity; Copper alloys; Current density; Logic devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507799
Filename
507799
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