Title :
Silicon molar volume discrepancy: perfection of the NRLM crystal [for Avogadro constant determination]
Author :
Nakayama, K. ; Fujimoto, H. ; Ishikawa, T. ; Takeno, H.
Author_Institution :
Nat. Res. Lab. of Metrol., Ibaraki, Japan
Abstract :
A large discrepancy was found in the molar volume of silicon used to determine Avogadro constant. Voids are suspected to cause the difference in the molar volume. Laser scattering tomography, secco-etching, electron spin resonance and X-ray topography have been applied to Japanese silicon to detect voids but no voids were observed in the crystal.
Keywords :
Constants; Density measurement; Etching; Light scattering; Measurement standards; Paramagnetic resonance; Silicon; X-ray topography; Avogadro constant determination; NRLM3 sample; Si; X-ray topography; crystal perfection; electron spin resonance; flow pattern defects; laser scattering tomography; molar volume discrepancy; secco-etching; voids absence; Chemical lasers; Laboratories; Metrology; Paramagnetic resonance; Resonance light scattering; Silicon; Surfaces; Tomography; X-ray lasers; X-ray scattering;
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-5744-2
DOI :
10.1109/CPEM.2000.850904
