DocumentCode
2127471
Title
NURA: a feasible, gas-dielectric interconnect process
Author
Anand, M.B. ; Yamada, M. ; Shibata, H.
Author_Institution
Semicond. Device Eng. Lab., Toshiba Corp., Kawasaki, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
82
Lastpage
83
Abstract
We have proposed a gas-dielectric interconnect process, and demonstrated its feasibility. While several engineering problems need to tackled before the proposed process is manufacturable, the incentive for further development of this process is huge since it can lead to the minimum physical value of the relative dielectric constant, 1.0.
Keywords
dielectric materials; integrated circuit interconnections; permittivity; NURA; dielectric constant; gas-dielectric interconnect; Dielectric constant; Manufacturing processes;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507801
Filename
507801
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