An integrated low resistance aluminum plug and low-k polymer dielectric for high performance 0.25 /spl mu/m interconnects

Low temperature aluminum plug fill schemes such as CVD Al and high pressure ForceFill/sup TM/ Al offer significant advantages in terms of lower via resistance and compatibility with low-k polymer dielectrics. The low processing temperature is desirable for advanced high performance sub-half micron interconnects with polymeric dielectrics. While the CVD Al process enables sub-300/spl deg/C plug processing, the ForceFill/sup TM/ process has also been shown to of relatively low temperature (400/spl deg/C). An embedded dielectric scheme is particularly attractive for integrating polymeric materials as this structure offers improved structural stability and alleviates many of the difficulties associated with via process integration. In this paper we present a comparison of CVD Al and ForceFill/sup TM/ Al for double level metal structures using embedded low-k dielectrics such as Parylene (N) (k=2.7) and Hydrogen Silsesquioxane (HSQ). Integration of Al and Parylene is shown to provide significant performance advantage for metal RC delay.