A new two-step metal-CMP technique for a high performance multilevel interconnects featured by Al- and "Cu in low /spl epsiv/, organic film"-metallizations

Author

Hayashi, Y. ; Onodera, T. ; Nakajima, T. ; Kikuta, K. ; Tsuchiya, Y. ; Kawahara, J. ; Takahashi, S. ; Ueno, K. ; Chikaki, S.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1996

fDate

11-13 June 1996

Firstpage

88

Lastpage

89

Abstract

A new 2-step metal-CMP technique has been developed for both of Al- and Cu-metallization, in which an as-deposited metal film is initially planarized by a hard-pad, and then is removed by a soft pad. The 2-step CMP improves no-failure-rate of the 1 /spl mu/m-pitch Al-interconnect to 90% in 6" wafer. Combining the CMP with Cu-CMP and a new organic film patterning method such as simultaneous resist-etch-back (SRECK), the Cu/benzocyclobutene (BCB) interconnects are successfully obtained.

Keywords

aluminium; copper; integrated circuit interconnections; integrated circuit metallisation; organic compounds; polishing; Al; Cu; benzocyclobutene; hard pad; metal film; multilevel interconnect; no-failure-rate; organic film patterning; planarization; simultaneous resist-etch-back; soft pad; two-step metal-CMP technique; Artificial intelligence; Chromium; Delay; Fabrication; Microelectronics; National electric code; Planarization; Sputtering; Topology; Ultra large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on

Conference_Location

Honolulu, HI, USA

Print_ISBN

0-7803-3342-X

Type

conf

DOI

10.1109/VLSIT.1996.507804

Filename

507804