• DocumentCode
    2127671
  • Title

    Direct measurement for SOI and bulk diodes of single-event-upset charge collection from energetic ions and alpha particles

  • Author

    Aton, T. ; Seitchik, J. ; Joyner, K. ; Houston, T. ; Shichijo, H.

  • Author_Institution
    Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    98
  • Lastpage
    99
  • Abstract
    We describe experiments on charge collection from fluorine ions striking ICs and compare with the collection from alpha particles. The fluorine ion strikes are similar to the energetic heavy ions produced when cosmic-ray-generated neutrons collide with silicon nuclei in an IC. The typical measured charge collection is 10 fC for alpha particles and greater than 100 fC for fluorine ions in bulk diodes. For fluorine ions hitting silicon-on-insulator (SOI) diodes, the charge collection is typically less than 9 fC.
  • Keywords
    DRAM chips; alpha-particle effects; electric charge; fluorine; integrated memory circuits; ion beam effects; neutron effects; semiconductor diodes; silicon-on-insulator; DRAM; F ions; ICs; SOI diodes; alpha particles; bulk diodes; cosmic-ray-generated neutrons; direct measurement; heavy energetic ions; semiconductor memory soft errors; single-event-upset charge collection; Alpha particles; Charge measurement; Current measurement; Diodes; Energy measurement; Neutrons; Nuclear measurements; Particle measurements; Silicon on insulator technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507808
  • Filename
    507808