DocumentCode
2127671
Title
Direct measurement for SOI and bulk diodes of single-event-upset charge collection from energetic ions and alpha particles
Author
Aton, T. ; Seitchik, J. ; Joyner, K. ; Houston, T. ; Shichijo, H.
Author_Institution
Semicond. Process & Device Center, Texas Instrum. Inc., Dallas, TX, USA
fYear
1996
fDate
11-13 June 1996
Firstpage
98
Lastpage
99
Abstract
We describe experiments on charge collection from fluorine ions striking ICs and compare with the collection from alpha particles. The fluorine ion strikes are similar to the energetic heavy ions produced when cosmic-ray-generated neutrons collide with silicon nuclei in an IC. The typical measured charge collection is 10 fC for alpha particles and greater than 100 fC for fluorine ions in bulk diodes. For fluorine ions hitting silicon-on-insulator (SOI) diodes, the charge collection is typically less than 9 fC.
Keywords
DRAM chips; alpha-particle effects; electric charge; fluorine; integrated memory circuits; ion beam effects; neutron effects; semiconductor diodes; silicon-on-insulator; DRAM; F ions; ICs; SOI diodes; alpha particles; bulk diodes; cosmic-ray-generated neutrons; direct measurement; heavy energetic ions; semiconductor memory soft errors; single-event-upset charge collection; Alpha particles; Charge measurement; Current measurement; Diodes; Energy measurement; Neutrons; Nuclear measurements; Particle measurements; Silicon on insulator technology;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507808
Filename
507808
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