Title :
100-GHz f/sub T/ Si homojunction bipolar technology
Author :
Ohue, E. ; Kiyota, Y. ; Onai, T. ; Tanabe, M. ; Washio, K.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
Rapid vapor-phase doping (RVD) provides very shallow and abrupt boron profiles. A cutoff-frequency of 100 GHz was achieved with a Si BJT having a base formed by RVD. Self-aligned metal/IDP (SMI) technology can reduce base resistance and collector capacitance. Combining RVD with SMI technology, a maximum oscillation frequency of 74 GHz and a 13.6-ps delay time in an ECL ring oscillator were achieved. The results showed homojunction transistors are valid for future high-speed and high-frequency applications.
Keywords :
bipolar MIMIC; bipolar MMIC; bipolar digital integrated circuits; boron; doping profiles; elemental semiconductors; integrated circuit technology; silicon; 100 GHz; 13.6 ps; 74 GHz; BJT; RVD; SMI technology; Si; Si homojunction bipolar technology; base formation; base resistance reduction; collector capacitance reduction; high-frequency applications; high-speed applications; rapid vapor-phase doping; self-aligned metal/IDP technology; shallow abrupt B profiles; Boron; Capacitance; Delay effects; Doping profiles; Frequency; Ring oscillators;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507811
