DocumentCode
2127805
Title
Highly reliable SiOF film formation by ECR-CVD using SiF/sub 2/H/sub 2/
Author
Fukuda, T. ; Hosokawa, T. ; Nakamura, Y. ; Katoh, K. ; Kobayashi, N.
Author_Institution
Semicond. Dev. Center, Hitachi Ltd., Kokubunji, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
114
Lastpage
115
Abstract
Highly stable SiOF films (/spl epsiv/=3.2-3.6) were obtained by using SiF/sub 2/H/sub 2/ and O/sub 2/. Advantages of the films formed by SiF/sub 2/H/sub 2/ process as compared to those by SiF/sub 4/ process are (1) little amount of gas desorption, (2) long-term stability after air exposure, (3) corrosion-free process for Al interconnects and (4) little damage to MOS electrical properties. This process was successfully applied to intermetal dielectrics of deep sub-micron MOS devices without causing the electrical degradation in MOS characteristics.
Keywords
MIS devices; chemical vapour deposition; dielectric thin films; silicon compounds; Al interconnect; ECR-CVD; SiF/sub 2/H/sub 2/; SiOF; SiOF film; air exposure; deep sub-micron MOS device; dielectric constant; electrical properties; gas desorption; intermetal dielectric; reliability; stability; Degradation; Dielectric devices; MOS devices; Stability;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507814
Filename
507814
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