• DocumentCode
    2127835
  • Title

    Water re-absorption into hygroscopic film in interlayer dielectrics and its impact on hot-carrier immunity

  • Author

    Ikeda, K. ; Okazaki, Y. ; Nakayama, S. ; Tsuchiya, T.

  • Author_Institution
    NTT LSI Labs., Atsugi, Japan
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    116
  • Lastpage
    117
  • Abstract
    We clarified the behavior of water molecules in interlayer dielectrics that contain a hygroscopic film, BPSG, prepared by APCVD using TEOS and ozone. Some of the water molecules move through the following path: water diffuses from the BPSG to the gate oxide and is later re-absorbed into the BPSG itself. The hygroscopic BPSG can act as a desiccating agent to pump water molecules out of the gate oxide. This result demonstrates the improvement of water-related hot-carrier immunity.
  • Keywords
    CVD coatings; MOS integrated circuits; VLSI; borosilicate glasses; dielectric thin films; hot carriers; integrated circuit measurement; integrated circuit reliability; phosphosilicate glasses; APCVD; B2O3-P2O5-SiO2; BPSG; MOSFET degradation; TEOS; VLSI; atmospheric-pressure CVD; desiccating agent; gate oxide; hot-carrier immunity; hygroscopic film; interlayer dielectrics; water reabsorption; Dielectric films; Hot carriers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507815
  • Filename
    507815