Title :
Water re-absorption into hygroscopic film in interlayer dielectrics and its impact on hot-carrier immunity
Author :
Ikeda, K. ; Okazaki, Y. ; Nakayama, S. ; Tsuchiya, T.
Author_Institution :
NTT LSI Labs., Atsugi, Japan
Abstract :
We clarified the behavior of water molecules in interlayer dielectrics that contain a hygroscopic film, BPSG, prepared by APCVD using TEOS and ozone. Some of the water molecules move through the following path: water diffuses from the BPSG to the gate oxide and is later re-absorbed into the BPSG itself. The hygroscopic BPSG can act as a desiccating agent to pump water molecules out of the gate oxide. This result demonstrates the improvement of water-related hot-carrier immunity.
Keywords :
CVD coatings; MOS integrated circuits; VLSI; borosilicate glasses; dielectric thin films; hot carriers; integrated circuit measurement; integrated circuit reliability; phosphosilicate glasses; APCVD; B2O3-P2O5-SiO2; BPSG; MOSFET degradation; TEOS; VLSI; atmospheric-pressure CVD; desiccating agent; gate oxide; hot-carrier immunity; hygroscopic film; interlayer dielectrics; water reabsorption; Dielectric films; Hot carriers;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507815