Title :
A novel damascene process for one mask via/interconnect formation
Author :
Tue Nguyen ; Ulrich, B.D. ; Allen, L.R. ; Evans, D.R.
Author_Institution :
Sharp Microelectron. Technol., Camus, WA, USA
Abstract :
A novel damascene process was proposed using one mask to form both via and interconnect patterns. Submicron structures were fabricated successfully using conventional equipment. This novel damascene process can significantly simplify the backend fabrication process and allows self alignment between via and interconnect patterns.
Keywords :
VLSI; integrated circuit interconnections; integrated circuit manufacture; integrated circuit reliability; masks; photoresists; IC reliability; backend fabrication process; damascene process; interconnect pattern formation; mask; photoresists; self alignment; submicron structures; via formation; Fabrication;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507816
