DocumentCode :
2127860
Title :
Effect of a back gate on the AC characteristics of quantum Hall devices
Author :
Delahaye, F. ; Kibble, B.P. ; Zarka, A.
Author_Institution :
Bur. Int. des Poids et Mesures, Sevres, France
fYear :
2000
fDate :
14-19 May 2000
Firstpage :
152
Lastpage :
153
Abstract :
When measured with AC at kHz frequencies the quantized Hall resistance (QHR) of a quantum Hall sample is usually found to be current and frequency dependent. We show that these AC characteristics can be modified by applying an AC potential difference between a back gate and the two-dimensional electron gas. The QHR current coefficient varies with the gate voltage and can be made equal to zero by an appropriate voltage setting. In these conditions the QHR frequency dependence is also reduced.
Keywords :
Current distribution; Electric resistance measurement; Measurement standards; Quantum Hall effect; Two-dimensional electron gas; AC characteristics; AC potential difference; back gate effect; current dependent; current distribution; frequency dependent; gate voltage dependence; quantized Hall resistance; quantum Hall devices; two-dimensional electron gas; Bridge circuits; Coaxial components; Current distribution; Electrical resistance measurement; Electrons; Frequency dependence; Frequency measurement; Molecular beam epitaxial growth; Resistors; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Precision Electromagnetic Measurements Digest, 2000 Conference on
Conference_Location :
Sydney, NSW, Australia
Print_ISBN :
0-7803-5744-2
Type :
conf
DOI :
10.1109/CPEM.2000.850923
Filename :
850923
Link To Document :
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