Title :
History dependence of non-fully depleted (NFD) digital SOI circuits
Author :
Assaderaghi, F. ; Shahidi, G.G. ; Hargrove, M. ; Hathorn, K. ; Hovel, H. ; Kulkarni, S. ; Rausch, W. ; Sadana, D. ; Schepis, D. ; Schulz, R. ; Yee, D. ; Sun, J. ; Dennard, R. ; Davari, B.
Author_Institution :
Semicond. Res. & Dev. Center, IBM Corp., Hopewell Junction, NY, USA
Abstract :
In this paper we experimentally demonstrate that the switching speed of digital circuits built from Non-Fully Depleted (NFD) SOI MOSFETs show a time dependence. Using a very high-bandwidth setup and pulses as short as 1 nsec, the magnitude and range of this memory effect are determined. It is demonstrated that the propagation delay variations have switching-history, V/sub dd/, and L/sub eff/ dependence. The cause of this behavior is traced to the SOI MOSFET´s floating body and the dynamic variations of its stored charge and potential.
Keywords :
MOS digital integrated circuits; VLSI; characteristics measurement; delays; field effect transistor switches; integrated circuit measurement; silicon-on-insulator; MOSFETs; digital SOI circuits; dynamic variations; floating body; high-bandwidth setup; memory effect; non-fully depleted circuits; propagation delay variations; stored charge; switching speed; switching-history dependence; time dependence; Digital circuits; History; MOSFETs; Propagation delay; Switching circuits;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507817
