Structure and hardness modifications induced by UV light in Ge-As-S amorphous chalcogenide films

Author

Popescu, M. ; Skordeva, E. ; Arsova, D. ; Vateva, E. ; Sava, F. ; Lorinczi, A.

Author_Institution

Nat. Inst. of Mater. Phys., Bucharest, Romania

Volume

2

fYear

1997

fDate

7-11 Oct 1997

Firstpage

467

Abstract

X-ray diffraction and transmission experiments as well as hardness measurements on virgin and ultra violet (UV)-irradiated amorphous films in the system Ge_xAs_40-xS₆₀ have been performed. The UV-light determines the film softening for x<19 and film hardening for x>19. The structure remains amorphous but the distance characteristic to medium range order (MRO) shows variations as a function of composition and irradiation time. The main effect of the UV light is the release of a significant amount of sulphur

Keywords

X-ray diffraction; chalcogenide glasses; germanium compounds; hardness; radiation effects; semiconductor thin films; (GeAs)₄₀S₆₀; Ge-As-S; Ge-As-S amorphous chalcogenide films; Ge_xAs_40-xS₆₀; UV light; X-ray diffraction; film hardening; film softening; hardness modifications; structure; Amorphous materials; Lighting; Optical films; Optical materials; Optical recording; Photoconducting materials; Physics; Resists; Softening; X-ray diffraction;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International

Conference_Location

Sinaia

Print_ISBN

0-7803-3804-9

Type

conf

DOI

10.1109/SMICND.1997.651251

Filename

651251