Title :
Structure and hardness modifications induced by UV light in Ge-As-S amorphous chalcogenide films
Author :
Popescu, M. ; Skordeva, E. ; Arsova, D. ; Vateva, E. ; Sava, F. ; Lorinczi, A.
Author_Institution :
Nat. Inst. of Mater. Phys., Bucharest, Romania
Abstract :
X-ray diffraction and transmission experiments as well as hardness measurements on virgin and ultra violet (UV)-irradiated amorphous films in the system GexAs40-xS60 have been performed. The UV-light determines the film softening for x<19 and film hardening for x>19. The structure remains amorphous but the distance characteristic to medium range order (MRO) shows variations as a function of composition and irradiation time. The main effect of the UV light is the release of a significant amount of sulphur
Keywords :
X-ray diffraction; chalcogenide glasses; germanium compounds; hardness; radiation effects; semiconductor thin films; (GeAs)40S60; Ge-As-S; Ge-As-S amorphous chalcogenide films; GexAs40-xS60; UV light; X-ray diffraction; film hardening; film softening; hardness modifications; structure; Amorphous materials; Lighting; Optical films; Optical materials; Optical recording; Photoconducting materials; Physics; Resists; Softening; X-ray diffraction;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651251
