Title :
Data retention times in SOI-DRAMs
Author :
Hyoung-Sub Kim ; Dong-Uk Choi ; Sang-Hoon Lee ; Seung-Kuk Lee ; Jae-Kwan Park ; Ki-Nam Kim ; Jong-Woo Park
Author_Institution :
Technol. Dev., Samsung Electron. Co., Kyungki-Do, South Korea
Abstract :
Refresh characteristics in SOI-DRAMs are discussed. Compared with bulk-Si DRAMs, excellent static refresh characteristics in SOI-DRAMs were obtained, owing to the inherently reduced junction area. Inferior dynamic refresh characteristics in SOI-DRAMs were measured due to the floating body, but this can be overcome by a pipe channel doping structure.
Keywords :
DRAM chips; MOS memory circuits; VLSI; characteristics measurement; integrated circuit measurement; silicon-on-insulator; 16 Mbit; SOI-DRAMs; data retention times; dynamic refresh characteristics; floating body; junction area; pipe channel doping structure; static refresh characteristics; Doping;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507819
