Electrical performances of retrograde versus conventional profile MOSFETs

Based on an improved current formulation, we show that in contrast to some recent reports the loss in current in Retrograde Channel Profile (RCP) devices is not inevitable. It is demonstrated theoretically and confirmed experimentally that when moving the peak of the RCP deeper into the bulk, the loss can be transformed into a significant gain. By applying deep Arsenic RCP we have improved the electrical performances of our 0.18 /spl mu/m (as drawn, 0.12 /spl mu/m electrical) MOSFETs compared with Phosphorus channel MOSFETs. A 12% increase in on-current and an almost 2 decade lower off-current are obtained.