Title :
Lattice misfit and elastic strain distribution in heteroepitaxial InP/InGaAs structure
Author :
Stoica, A.D. ; Popa, N. ; Stoica, Mihaela ; Sachelarie, D. ; Sachelarie, Mariana ; Rusu, E.
Author_Institution :
Nat. Inst. of Phys. of Mater., Bucharest, Romania
Abstract :
We obtained a multilayer heteroepitaxial structure of In0.53 Ga0.47As-type deposed on (100) oriented InP substrate. We selected deliberately different thickness and doping concentrations of each layer for their potential applications in very high frequency bipolar transistors. A sequence of six epilayers were realized by vapour phase epitaxy. The characterization of crystallographic and semiconducting properties in correlation with technological processes is performed by TSC-method and by double crystal X-ray diffraction. We propose a kinematics model of X-ray diffraction in heteroepitaxial muitilayer structures of InP/InGaAs. It is based on a discontinuous lattice misfit and elastic strain distribution. The model fits well the rocking curves obtained for both (004) and (224) reflecting planes. The values of the lattice misfit and the elastic strains in the plane of lamellae were calculated
Keywords :
III-V semiconductors; X-ray diffraction; gallium arsenide; heterojunction bipolar transistors; indium compounds; interface structure; semiconductor doping; semiconductor growth; semiconductor heterojunctions; stress-strain relations; thermally stimulated currents; In0.53Ga0.47As; In0.53Ga0.47As-InP; X-ray diffraction; discontinuous lattice misfit; doping concentrations; elastic strain distribution; heteroepitaxial InP/InGaAs structure; heteroepitaxial muitilayer structures; lattice misfit; rocking curves; thickness; vapour phase epitaxy; very high frequency bipolar transistors; Bipolar transistors; Capacitive sensors; Epitaxial growth; Frequency; Indium phosphide; Lattices; Nonhomogeneous media; Semiconductor device doping; Substrates; X-ray diffraction;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651262
