DocumentCode
2128218
Title
High sensitivity and low dark current PIN photodiode with homojunction in n-InGaAaS/InP isotype heterostructure
Author
Budianu, Elena ; Purica, Munizer ; Rusu, Emil ; Nan, Stelian
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume
2
fYear
1997
fDate
7-11 Oct 1997
Firstpage
485
Abstract
The preparation and properties of Zn-diffusion homojunction InP/In 0.53Ga0.47As photodiodes capable to operate in the 0.8-1.7 μm wavelength range are described. These PIN photodiodes exhibit a sensitivity of 0.3 A/W at 0.8 μm wavelength and 0.82 A/W at 1.3 μm, a generation-recombination limited dark current of 10-7 A/mm2 and 140 ps risetime
Keywords
III-V semiconductors; dark conductivity; electron-hole recombination; gallium arsenide; indium compounds; p-i-n photodiodes; sensitivity; 0.8 to 1.7 mum; 140 ps; InP-In0.53Ga0.47As; InP/In0.53Ga0.47As photodiodes; Zn-diffusion homojunction; generation-recombination limited dark current; homojunction; low dark current pin photodiode; n-InGaAaS/InP isotype heterostructure; Dark current; Heterojunctions; High speed optical techniques; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; Optical sensors; PIN photodiodes; Photodetectors; Stimulated emission;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location
Sinaia
Print_ISBN
0-7803-3804-9
Type
conf
DOI
10.1109/SMICND.1997.651264
Filename
651264
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