DocumentCode
2128223
Title
An optimized densification of the filled oxide for quarter micron shallow trench isolation (STI)
Author
Han Sin Lee ; Moon Han Park ; Yu Gyun Shin ; Tai-Su Park ; Ho Kyu Kang ; Sang In Lee ; Moon Yong Lee
Author_Institution
Semicond. Res. Centre, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
fYear
1996
fDate
11-13 June 1996
Firstpage
158
Lastpage
159
Abstract
Densification methods using H/sub 2/O and N/sub 2/ ambient annealing of the filled CVD oxide for quarter micron STI are compared. Although the H/sub 2/O ambient oxidation is more effective in terms of the resistance against the HF etching, volume expansion by the trench sidewall oxidation generates a large amount of stress in the narrow isolation region. However, an N/sub 2/ gas ambient annealing at high temperature shows a low stress and a low HF etch rate which enable us to fabricate the stable quarter micron STI.
Keywords
CVD coatings; annealing; densification; etching; internal stresses; isolation technology; oxidation; semiconductor technology; 0.25 micron; H/sub 2/O; HF; N/sub 2/; annealing; densification; etching; filled CVD oxide; oxidation; shallow trench isolation; stress; Annealing; Etching; Hafnium; Oxidation; Stress; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507832
Filename
507832
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