Title :
Reverse short-channel effects and channel-engineering in deep-submicron MOSFETs: modeling and optimization
Author :
Bin Yu ; Nowak, E. ; Noda, K. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
For the first time, a theoretical model is presented, taking into account all the physical effects of T/sub OX/, X/sub j/, N/sub sub/, V/sub BS/, and channel engineering PTS scheme, to predict the Reverse-Short-Channel Effect (RSCE) in deep-submicron devices of several technology generations. The /spl Delta/V/sub th/ is found to follow the superposition principle. The worst case L/sub min/ is also modelled and its ultimate lower bound is exploited via optimum channel engineering.
Keywords :
MOSFET; semiconductor device models; channel engineering; deep-submicron MOSFET; model; optimization; punchthrough stopper; reverse short-channel effect; superposition principle; threshold voltage; Predictive models;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507833
