Title :
Performance of InAs photoelectromagnetic infrared detectors at room temperature
Author :
Logofatu, Michaela ; Logofatu, Bogdan ; Grigorescu, Cristiana ; Munteanu, Irina
Author_Institution :
Bucharest Univ., Romania
Abstract :
The spectral distribution of the open-circuit voltage and the spectral responsivity over the range (1.0-5.0 μm) for InAs photoelectromagnetic (PEM) near-infrared (NIR) detector at 300 K are presented. The correlation between material parameters, geometrical dimensions and the detector performance is discussed. The surface recombination velocity (102-9×103 cm/s) at the active surface is also considered
Keywords :
III-V semiconductors; indium compounds; infrared detectors; photodetectors; photoelectromagnetic effects; surface recombination; 1.0 to 5.0 mum; 300 K; InAs; InAs photoelectromagnetic infrared detectors; active surface; detector performance; geometrical dimensions; material parameters; near IR detector; open-circuit voltage; room temperature; spectral distribution; spectral responsivity; surface recombination velocity; Circuits; Face detection; Infrared detectors; Intrusion detection; Photoconducting materials; Photoconductivity; Radiation detectors; Radiative recombination; Temperature; Voltage;
Conference_Titel :
Semiconductor Conference, 1997. CAS '97 Proceedings., 1997 International
Conference_Location :
Sinaia
Print_ISBN :
0-7803-3804-9
DOI :
10.1109/SMICND.1997.651265
