Title :
A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application
Author :
John, J.P. ; Ilderem, V. ; Changhae Park ; Teplik, J. ; Klein, K. ; Cheng, S.
Author_Institution :
Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
Abstract :
We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the threshold voltage without causing excessive leakage. A 1-Volt HC08 based microcontroller has been built with this technology, achieving >1 MHz operation at 0.9 V, with low stand-by leakage.
Keywords :
CMOS digital integrated circuits; MOSFET; ion implantation; leakage currents; microcontrollers; 0.9 V; 1 to 6 MHz; 30 nA; HC08 based microcontroller; channel engineering; graded-channel implantation; low stand-by leakage; low voltage graded-channel MOSFET; subthreshold slope lowering; threshold voltage reduction; twin well processing; Circuit optimization; Low voltage; MOSFET circuits; Microcontrollers; Silicon; Threshold voltage;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507843
