DocumentCode
2128480
Title
A low voltage graded-channel MOSFET (LV-GCMOS) for sub 1-volt microcontroller application
Author
John, J.P. ; Ilderem, V. ; Changhae Park ; Teplik, J. ; Klein, K. ; Cheng, S.
Author_Institution
Adv. Custom Technol., Motorola Inc., Mesa, AZ, USA
fYear
1996
fDate
11-13 June 1996
Firstpage
178
Lastpage
179
Abstract
We report for the first time, a bulk silicon, low voltage graded-channel MOSFET (LV-GCMOS) capable of operating below 1 volt, while delivering the required circuit performance. Channel engineering enabled a lowering of the subthreshold slope by more than 10 mV/dec, allowing for a reduction in the threshold voltage without causing excessive leakage. A 1-Volt HC08 based microcontroller has been built with this technology, achieving >1 MHz operation at 0.9 V, with low stand-by leakage.
Keywords
CMOS digital integrated circuits; MOSFET; ion implantation; leakage currents; microcontrollers; 0.9 V; 1 to 6 MHz; 30 nA; HC08 based microcontroller; channel engineering; graded-channel implantation; low stand-by leakage; low voltage graded-channel MOSFET; subthreshold slope lowering; threshold voltage reduction; twin well processing; Circuit optimization; Low voltage; MOSFET circuits; Microcontrollers; Silicon; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507843
Filename
507843
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