Title :
Fabrication of small contact with novel mask design
Author :
Kang, H.Y. ; Lee, J.H. ; Cha, D.H. ; Moon, S.Y. ; Koh, Y.B.
Author_Institution :
Res. & Dev. Center Memory Div., Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
Using novel mask design, it was possible to print 0.28 /spl mu/m contacts with i-line lithography and 0.22 /spl mu/m contacts with DUV lithography. With a higher NA DUV stepper, it will be possible to print even smaller contacts for 1 Gbit DRAMs.
Keywords :
image resolution; masks; photolithography; proximity effect (lithography); 0.22 mum; 0.28 mum; 220 nm; 300 nm; DRAMs; DUV lithography; DUV stepper; aerial image resolution; dummy lined contact; i-line lithography; mask design; optical proximity corrected contact; small contact fabrication; Fabrication; Lithography;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507845
