• DocumentCode
    2128553
  • Title

    Feasibility demonstration of 0.18 /spl mu/m and 0.13 /spl mu/m optical projection lithography based on CD control calculations

  • Author

    Kee-Ho Kim ; Ronse, K. ; Yen, A. ; Van den Hove, L.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    186
  • Lastpage
    187
  • Abstract
    For the first time, it has been shown that 0.18 /spl mu/m and 0.13 /spl mu/m generations can be printed with acceptable CD control using optical projection lithography (248 nm and 193 nm wavelengths respectively). To prove this, a combination of stepper parameters and resolution enhancement techniques was optimised first. The Norman-Debora software allowed us to predict the actual CD control for printing 0.18 /spl mu/m grouped and isolated features using KrF and printing 0.13 /spl mu/m features using ArF, based on realistic process windows and focus/exposure budgets which have been calibrated to experiments for 0.25 /spl mu/m and 0.18 /spl mu/m.
  • Keywords
    image resolution; phase shifting masks; photolithography; proximity effect (lithography); semiconductor process modelling; size control; 0.13 mum; 0.18 mum; 193 nm; 248 nm; ArF; CD control calculations; KrF; Norman-Debora software; focus/exposure budgets; grouped features; isolated features; optical projection lithography; optical proximity correction; phase shifting masks; process windows; quadrupole illumination; resolution enhancement techniques; stepper parameters; Lithography; Optical control; Printing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507846
  • Filename
    507846