• DocumentCode
    2128605
  • Title

    An electromigration failure model of tungsten plug contacts/vias for realistic lifetime prediction

  • Author

    Kawasaki, H. ; Hu, C.K.

  • Author_Institution
    Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
  • fYear
    1996
  • fDate
    11-13 June 1996
  • Firstpage
    192
  • Lastpage
    193
  • Abstract
    An EM failure model which considers the incubation time and Al drift time separately has been established. The model predicts that the lifetimes of Al-Cu interconnects at the W plug contacts/vias under operating conditions are dominated by Cu diffusion (incubation time) in Al-Cu. For a realistic EM lifetime prediction of VLSI interconnects under operating conditions, the understanding of Cu movement during current stress is essential.
  • Keywords
    VLSI; aluminium alloys; copper alloys; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; semiconductor process modelling; tungsten; Al drift time; Al-Cu interconnects; AlCu; Cu diffusion; VLSI interconnects; W; W plug contacts/vias; current stress; electromigration failure model; incubation time; lifetime prediction; operating conditions; Electromigration; Plugs; Predictive models; Stress; Tungsten; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
  • Conference_Location
    Honolulu, HI, USA
  • Print_ISBN
    0-7803-3342-X
  • Type

    conf

  • DOI
    10.1109/VLSIT.1996.507848
  • Filename
    507848