DocumentCode :
2128605
Title :
An electromigration failure model of tungsten plug contacts/vias for realistic lifetime prediction
Author :
Kawasaki, H. ; Hu, C.K.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear :
1996
fDate :
11-13 June 1996
Firstpage :
192
Lastpage :
193
Abstract :
An EM failure model which considers the incubation time and Al drift time separately has been established. The model predicts that the lifetimes of Al-Cu interconnects at the W plug contacts/vias under operating conditions are dominated by Cu diffusion (incubation time) in Al-Cu. For a realistic EM lifetime prediction of VLSI interconnects under operating conditions, the understanding of Cu movement during current stress is essential.
Keywords :
VLSI; aluminium alloys; copper alloys; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; semiconductor process modelling; tungsten; Al drift time; Al-Cu interconnects; AlCu; Cu diffusion; VLSI interconnects; W; W plug contacts/vias; current stress; electromigration failure model; incubation time; lifetime prediction; operating conditions; Electromigration; Plugs; Predictive models; Stress; Tungsten; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
Type :
conf
DOI :
10.1109/VLSIT.1996.507848
Filename :
507848
Link To Document :
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