DocumentCode
2128605
Title
An electromigration failure model of tungsten plug contacts/vias for realistic lifetime prediction
Author
Kawasaki, H. ; Hu, C.K.
Author_Institution
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
fYear
1996
fDate
11-13 June 1996
Firstpage
192
Lastpage
193
Abstract
An EM failure model which considers the incubation time and Al drift time separately has been established. The model predicts that the lifetimes of Al-Cu interconnects at the W plug contacts/vias under operating conditions are dominated by Cu diffusion (incubation time) in Al-Cu. For a realistic EM lifetime prediction of VLSI interconnects under operating conditions, the understanding of Cu movement during current stress is essential.
Keywords
VLSI; aluminium alloys; copper alloys; electromigration; failure analysis; integrated circuit interconnections; integrated circuit metallisation; integrated circuit modelling; integrated circuit reliability; semiconductor process modelling; tungsten; Al drift time; Al-Cu interconnects; AlCu; Cu diffusion; VLSI interconnects; W; W plug contacts/vias; current stress; electromigration failure model; incubation time; lifetime prediction; operating conditions; Electromigration; Plugs; Predictive models; Stress; Tungsten; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507848
Filename
507848
Link To Document