Title :
p-Type AlN nanowires and AlN nanowire light emitting diodes on Si
Author :
Zhao, S. ; Connie, A.T. ; Le, B.H. ; Kong, X. ; Guo, H. ; Du, X.Z. ; Lin, J.Y. ; Jiang, H.X. ; Shih, I. ; Mi, Z.
Author_Institution :
Department of Electrical and Computer Engineering, McGill University, Montreal, Quebec H3A 0E9, Canada
Abstract :
We show that Mg doping into AlN nanowires can be drastically enhanced, due to the reduced formation energy. The effective hole hopping conduction leads to AlN nanowire light emitting diodes with low turn-on voltage (∼ 6V).
Keywords :
Aluminum gallium nitride; Aluminum nitride; III-V semiconductor materials; Light emitting diodes; Nanowires; Silicon; Wide band gap semiconductors; Si; hopping conduction; light emitting diodes; nanowire; p-type AlN;
Conference_Titel :
Summer Topicals Meeting Series (SUM), 2015
Conference_Location :
Nassau, Bahamas
Print_ISBN :
978-1-4799-7467-2
DOI :
10.1109/PHOSST.2015.7248228
