Title :
A high programming throughput 0.35 /spl mu/m p-channel DINOR flash memory
Author :
Sakamoto, O. ; Onoda, H. ; Katayama, T. ; Hayashi, K. ; Yamasaki, N. ; Sakakibara, K. ; Ohnakado, T. ; Takada, H. ; Tsuji, N. ; Ajika, N. ; Hatanaka, M. ; Miyoshi, H.
Author_Institution :
ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
A high programming throughput p-channel DINOR flash memory with the BBHE injection programming method has been developed using 0.35 /spl mu/m CMOS process. This programming method realizes a high programming throughput of 8 nsec/Byte by utilizing 512 Byte parallel program operation with a low leakage current of less than 250 /spl mu/A. We have also demonstrated the good erase/write cycling endurance of 1/spl times/10/sup 5/. This process and device technology is very promising to the high performance 64 Mbit flash memories and future flash devices.
Keywords :
CMOS memory circuits; EPROM; PLD programming; hot carriers; leakage currents; parallel programming; tunnelling; 0.35 micron; 250 muA; 64 Mbit; BBHE injection programming; CMOS process; divided bit-line NOR operations; erase/write cycling endurance; high density memory; high programming throughput; hot electron injection; low leakage current; p-channel DINOR flash memory; parallel program operation; CMOS process; Flash memory; Leakage current; Parallel programming; Throughput;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507858
