Title :
The effect of nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide
Author :
Nakayama, S. ; Sakai, T.
Author_Institution :
NTT LSI Labs., Kanagawa, Japan
Abstract :
The effects of in-situ doped or implanted nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide have been investigated. It is confirmed that the decrease in the boron diffusivity in the interior of polysilicon gate rather than the nitrogen pile-up or changes in the segregation coefficient at the polysilicon/SiO/sub 2/ interface is responsible for the retardation of boron penetration.
Keywords :
MOSFET; boron; chemical interdiffusion; elemental semiconductors; ion implantation; semiconductor-insulator boundaries; silicon; B diffusivity; B penetration; Si; Si substrate; Si:B-SiO/sub 2/; Si:N; gate oxide; implanted N; in-situ doped N; p+ polysilicon gates; polysilicon/SiO/sub 2/ interface; Boron; Nitrogen; Silicon;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507860
