DocumentCode
2128896
Title
The effect of nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide
Author
Nakayama, S. ; Sakai, T.
Author_Institution
NTT LSI Labs., Kanagawa, Japan
fYear
1996
fDate
11-13 June 1996
Firstpage
228
Lastpage
229
Abstract
The effects of in-situ doped or implanted nitrogen in p+ polysilicon gates on boron penetration into silicon substrate through the gate oxide have been investigated. It is confirmed that the decrease in the boron diffusivity in the interior of polysilicon gate rather than the nitrogen pile-up or changes in the segregation coefficient at the polysilicon/SiO/sub 2/ interface is responsible for the retardation of boron penetration.
Keywords
MOSFET; boron; chemical interdiffusion; elemental semiconductors; ion implantation; semiconductor-insulator boundaries; silicon; B diffusivity; B penetration; Si; Si substrate; Si:B-SiO/sub 2/; Si:N; gate oxide; implanted N; in-situ doped N; p+ polysilicon gates; polysilicon/SiO/sub 2/ interface; Boron; Nitrogen; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location
Honolulu, HI, USA
Print_ISBN
0-7803-3342-X
Type
conf
DOI
10.1109/VLSIT.1996.507860
Filename
507860
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