Title :
Direct lateral profiling of both interface traps and oxide charge in thin gate MOSFET devices
Author :
Chen, C. ; Ma, T.P.
Author_Institution :
Center for Microelectron. Mater. & Structures, Yale Univ., New Haven, CT, USA
Abstract :
A simple method has been developed to measure the localized hot carrier damage in scaled thin-gate MOSFET´s. Lateral distributions of both interface traps and oxide charge can be derived directly from experimental charge pumping results without numerical simulation.
Keywords :
MOSFET; electric charge; electron traps; hot carriers; interface states; charge pumping results; direct lateral profiling; interface traps; localized hot carrier damage; oxide charge; thin gate MOSFET devices; Charge pumps; Hot carriers; Numerical simulation;
Conference_Titel :
VLSI Technology, 1996. Digest of Technical Papers. 1996 Symposium on
Conference_Location :
Honolulu, HI, USA
Print_ISBN :
0-7803-3342-X
DOI :
10.1109/VLSIT.1996.507861
