94 GHz power amplifier device architecture in SiGe for active phased arrays

This paper discusses the first implementation of the High Voltage / High Power (HiVP) Amplifier Architecture in silicon in the W-band. Designed and laid out using a commercial 120 nm SiGe HBT BiCMOS process, a saturated output power of 9.7 dBm, gain of 7.7 dB, and a PAE of 12.0 % in an area of 0.20 mm² have been achieved at 94 GHz. Small signal gain >; 10 dB has been simulated from 50 GHz to 110 GHz. The intent of this paper is to introduce an amplifier device architecture intended for inclusion in transmitter / receiver ICs that would become a part of an active phased array operating in the W-band. In addition, provide designers with a simplified simulation technique, layout examples, and an architecture with a small layout footprint over classical techniques employed in current research.