Title :
Temperature sensor based on 4H-SiC diodes for hostile environments
Author :
Rao, S. ; Pangallo, G. ; Della Corte, F.G. ; Nipoti, R.
Author_Institution :
Dept. of Inf. Eng., Infrastruct. & Sustainable Energy, DIIES, Univ. degli studi “Mediterranea”, Reggio Calabria, Italy
Abstract :
A high-performance Proportional To Absolute Temperature (PTAT) sensor based on two integrated 4H-SiC Schottky diodes is presented. The linear dependence between the voltage differences across the forward-biased diodes and the temperature, in a range from 30°C up to 300°C, has been used for thermal sensing. A high sensitivity of 5.13 mV/°C at two constant bias currents has been measured.
Keywords :
Schottky diodes; silicon compounds; temperature measurement; temperature sensors; PTAT sensor; SiC; constant bias current; forward biased diode; hostile environments; integrated 4H-SiC Schottky diode; proportional to absolute temperature sensor; temperature 30 degC to 300 degC; thermal sensing; Schottky diodes; Sensitivity; Temperature distribution; Temperature measurement; Temperature sensors; Schottky diodes; silicon carbide; temperature sensors; wide band gap semiconductors;
Conference_Titel :
AISEM Annual Conference, 2015 XVIII
Conference_Location :
Trento
DOI :
10.1109/AISEM.2015.7066771
