DocumentCode
2129110
Title
Vertical cavity transistor laser for on-chip OICs
Author
Feng, Milton ; Liu, Michael ; Wang, Curtis ; Holonyak, Nick, Jr.
Author_Institution
Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, 1406 W. Green St., Urbana, IL 61801 USA
fYear
2015
fDate
13-15 July 2015
Firstpage
146
Lastpage
147
Abstract
Transistor Laser (TL) has picosecond radiative recombination lifetime; thus, it will have modulation bandwidth higher than VCSELs. TL has demonstrated error free transmission at 22 Gb/s and vertical cavity TL can achieve ultralow power operation.
Keywords
Cavity resonators; Modulation; Optical attenuators; Radiative recombination; Stimulated emission; Transistors; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Summer Topicals Meeting Series (SUM), 2015
Conference_Location
Nassau, Bahamas
Print_ISBN
978-1-4799-7467-2
Type
conf
DOI
10.1109/PHOSST.2015.7248238
Filename
7248238
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