Parametric THz frequency multiplication using CMOS technology

Author

Zhao, Zhixing ; Bousquet, Jean-Francois ; Magierowski, Sebastian

Author_Institution

Schulich Sch. of Eng. Electr. & Comput. Eng., Univeristy of Calgary, Calgary, AB, Canada

fYear

2010

fDate

2-5 May 2010

Firstpage

1

Lastpage

5

Abstract

Accumulation-mode MOS varactors (AMOSVs) are considered for use in THz frequency multipliers. The superior modulation ratios and lower series loss relative to silicon Schottky diodes for a 130-nm CMOS technology are highlighted. Dynamic cutoff frequencies in excess of 1-THz are predicted. AMOSV potential for 10-dB loss, 600-GHz doublers is discussed as is an integrated 100-GHz doubler design.

Keywords

CMOS integrated circuits; Schottky diodes; elemental semiconductors; frequency multipliers; parametric devices; silicon; terahertz wave devices; varactors; CMOS technology; accumulation-mode MOS varactors; dynamic cutoff frequencies; modulation ratios; parametric THz frequency multiplication; series loss; silicon Schottky diodes; size 130 nm; CMOS integrated circuits; CMOS technology; Generators; Logic gates; Oscillators; Silicon; Varactors; MOS varactor; Schottky diode; Terahertz technology; frequency doubler; frequency multiplier;

fLanguage

English

Publisher

ieee

Conference_Titel

Electrical and Computer Engineering (CCECE), 2010 23rd Canadian Conference on

Conference_Location

Calgary, AB

ISSN

0840-7789

Print_ISBN

978-1-4244-5376-4

Electronic_ISBN

0840-7789

Type

conf

DOI

10.1109/CCECE.2010.5575203

Filename

5575203