Voltage doubler rectifier based on 4H-SiC diodes for high-temperatures energy harvesting applications

Author

Rao, S. ; Pangallo, G. ; Della Corte, F.G. ; Nipoti, R.

Author_Institution

Dept. of Inf. Eng., Univ. Degli Studi “Mediterranea”, Reggio Calabria, Italy

fYear

2015

fDate

3-5 Feb. 2015

Firstpage

1

Lastpage

3

Abstract

A voltage doubler rectifier for hostile environments, in particular at high temperatures, is presented. The system consists of a clamper section and a single diode rectifier working at higher temperatures with respect to the conventional operating thermal domain of silicon electronics. Both sections are realized with integrated 4H-SiC Schottky diodes. The rectified output amplitude signal voltage increases with the temperature due to the corresponding diode threshold voltage lowering.

Keywords

Schottky diodes; energy harvesting; rectifying circuits; silicon compounds; voltage multipliers; wide band gap semiconductors; 4H-SiC Schottky diodes; 4H-SiC diodes; SiC; amplitude signal voltage; clamper section; diode threshold voltage lowering; high-temperatures energy harvesting; silicon electronics; single diode rectifier; voltage doubler rectifier; Rectifiers; Schottky diodes; Silicon carbide; Temperature; Temperature sensors; High temperature devices; schottky diode; silicon carbide; voltage doubler rectifier; wide band gap semiconductors;

fLanguage

English

Publisher

ieee

Conference_Titel

AISEM Annual Conference, 2015 XVIII

Conference_Location

Trento

Type

conf

DOI

10.1109/AISEM.2015.7066776

Filename

7066776