Title :
Design of very low pase noise MMIC reproducible X band DRO
Author :
Maurin, P ; Laporte, E. ; Branger, B ; Nallatamby, J C ; Reffet, D. ; Prigent, M.
Author_Institution :
Thomson-CSF Microelectronique, 29 Av. Carnot, 91349 Massy, Cedex, France.
Abstract :
This paper describes the design, building and measurement of a low-phase noise MMIC DRO using a new design method based on the open loop concept and state-of-the-art CAD tools. This DRO, whose setting is very easy, has an oscillation frequency of 10 GHz and an output power of 15 dBm. Its reproducible phase noise of ¿105 dBc/Hz at 10 KHz from the carrier is the best result published for an MMIC FET DRO.
Keywords :
Delay; Dielectrics; Frequency synthesizers; Integrated circuit noise; MMICs; Oscillators; Performance gain; Phase noise; Semiconductor device noise; Voltage;
Conference_Titel :
Microwave Conference, 1996. 26th European
Conference_Location :
Prague, Czech Republic
DOI :
10.1109/EUMA.1996.337670
