Confirmation on the size-dependence of Young´s modulus of single crystal silicon from the TEM tensile tests

Author

Jin, Q.H. ; Li, T. ; Wang, Y.L. ; Gao, X.L. ; Xu, F.F.

Author_Institution

State Key Labs. of Transducer Technol., Chinese Acad. of Sci., Shanghai, China

fYear

2010

fDate

1-4 Nov. 2010

Firstpage

2530

Lastpage

2533

Abstract

With the developed process, four MEMS tensile testing chips of <;110>;-oriented single crystal silicon (SCS) nanobeams were achieved in one SOI wafer with thickness from 45 to 100 nm. Mounting the chips onto a custom made TEM sample holder, which integrated also comb drives and force sensor beam, in-situ TEM tensile tests were carried out. The measured Young´s modulus (from 74 Gpa to 178 Gpa) is in agreement well with our previous results of tensile tests in SEM. A simple model was constructed to explain the behaviors of the Young´s modulus by tensile tests, resonance tests and pull-in tests since all datas approach to ~75 GPa when the nanobeam´s thickness close to 40 nm.

Keywords

Young´s modulus; beams (structures); elemental semiconductors; force sensors; microfabrication; micromechanical devices; nanoelectromechanical devices; nanostructured materials; silicon; tensile strength; tensile testing; transmission electron microscopy; MEMS tensile testing chips; SOI wafer; Si; TEM; Young´s modulus; comb drives; force sensor beam; resonance tests; single crystal silicon nanobeams; size 45 nm to 100 nm; size dependence;

fLanguage

English

Publisher

ieee

Conference_Titel

Sensors, 2010 IEEE

Conference_Location

Kona, HI

ISSN

1930-0395

Print_ISBN

978-1-4244-8170-5

Electronic_ISBN

1930-0395

Type

conf

DOI

10.1109/ICSENS.2010.5690465

Filename

5690465