DocumentCode :
2129465
Title :
Confirmation on the size-dependence of Young´s modulus of single crystal silicon from the TEM tensile tests
Author :
Jin, Q.H. ; Li, T. ; Wang, Y.L. ; Gao, X.L. ; Xu, F.F.
Author_Institution :
State Key Labs. of Transducer Technol., Chinese Acad. of Sci., Shanghai, China
fYear :
2010
fDate :
1-4 Nov. 2010
Firstpage :
2530
Lastpage :
2533
Abstract :
With the developed process, four MEMS tensile testing chips of <;110>;-oriented single crystal silicon (SCS) nanobeams were achieved in one SOI wafer with thickness from 45 to 100 nm. Mounting the chips onto a custom made TEM sample holder, which integrated also comb drives and force sensor beam, in-situ TEM tensile tests were carried out. The measured Young´s modulus (from 74 Gpa to 178 Gpa) is in agreement well with our previous results of tensile tests in SEM. A simple model was constructed to explain the behaviors of the Young´s modulus by tensile tests, resonance tests and pull-in tests since all datas approach to ~75 GPa when the nanobeam´s thickness close to 40 nm.
Keywords :
Young´s modulus; beams (structures); elemental semiconductors; force sensors; microfabrication; micromechanical devices; nanoelectromechanical devices; nanostructured materials; silicon; tensile strength; tensile testing; transmission electron microscopy; MEMS tensile testing chips; SOI wafer; Si; TEM; Young´s modulus; comb drives; force sensor beam; resonance tests; single crystal silicon nanobeams; size 45 nm to 100 nm; size dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
ISSN :
1930-0395
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2010.5690465
Filename :
5690465
Link To Document :
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