• DocumentCode
    2129693
  • Title

    GeSn mid-IR materials and devices for 3D photonic integration

  • Author

    Liu, Jifeng ; Li, Haofeng ; Wang, Xiaoxin

  • Author_Institution
    Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA
  • fYear
    2015
  • fDate
    13-15 July 2015
  • Firstpage
    189
  • Lastpage
    190
  • Abstract
    We present direct gap, pseudo-single-crystal GeSn on amorphous dielectric layers and flexible substrates for MIR active integrated photonics. The high transient gain and the strain engineering via flexible substrate deformation indicate promising device applications.
  • Keywords
    Annealing; Crystallization; Photonic band gap; Photonics; Substrates; Tensile strain; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Summer Topicals Meeting Series (SUM), 2015
  • Conference_Location
    Nassau, Bahamas
  • Print_ISBN
    978-1-4799-7467-2
  • Type

    conf

  • DOI
    10.1109/PHOSST.2015.7248262
  • Filename
    7248262
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2129693