Physical and electrical modelling of discrete devices for the design and the optimization of microwave monolithic integrated circuits

The design of microwave monolithic integrated circuits needs the availability of a large data base and accurate electrical models for active devices (FETs and HBTs). For this purpose, a global approach based on the combination of several simulation and modelling tools must be used. The elements of this continuous chain are presented, after recalling the main requirements that they must satisfy. First the main physical simulation methods of active devices are described: Monte Carlo, 2D and quasi 2D models; their respective advantages and drawbacks are discussed. Then, principle and recent progress in devices parameters extraction methods are presented. The main trends and problems in term of electrical models are summarized and typical examples of recent applications are given.