Structural characterization of sol-gel ZnO thin films on different substrates for memristive application

Author

Ayana, Dawit G. ; Prusakova, Valentina ; Ceccato, Riccardo ; Dire, Sandra

Author_Institution

Dept. of Ind. Eng., Univ. of Trento, Trento, Italy

fYear

2015

fDate

3-5 Feb. 2015

Firstpage

1

Lastpage

4

Abstract

Sol-gel derived multilayer ZnO thin films were successfully prepared by spin coating technique on glass, Si wafer and platinum substrates. Structural and morphological features of the samples were investigated by field emission scanning electron microscopy (FE-SEM) and X-ray diffraction (XRD) analysis. The combined techniques assess that uniform flawless films with preferable c-axis orientation of the ZnO crystallites could be obtained. The preliminary electrical measurements on sol-gel derived SiO₂/Ti/Pt/ZnO/Ag systems showed memristive behavior, and the detailed studies of switching response are in progress.

Keywords

II-VI semiconductors; X-ray diffraction; crystallites; field emission electron microscopy; memristors; metal-semiconductor-metal structures; multilayers; platinum; scanning electron microscopy; semiconductor devices; semiconductor growth; semiconductor thin films; silicon compounds; silver; sol-gel processing; spin coating; texture; titanium; wide band gap semiconductors; zinc compounds; FESEM; SiO-Ti-Pt-ZnO-Ag; X-ray diffraction; XRD; crystallites; electrical measurements; field emission scanning electron microscopy; memristive application; memristive behavior; morphological properties; preferable c-axis orientation; sol-gel multilayer thin films; spin coating technique; structural properties; switching response; Annealing; Films; Glass; Silicon; Substrates; X-ray scattering; Zinc oxide; memristive behavior; sol-gel; zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

AISEM Annual Conference, 2015 XVIII

Conference_Location

Trento

Type

conf

DOI

10.1109/AISEM.2015.7066799

Filename

7066799