DocumentCode :
2130170
Title :
High-Power and High-Voltage AlGaN/GaN HEMTs-on-Si
Author :
Park, Chris ; Edwards, Andrew ; Rajagopal, Pradeep ; Johnson, Wayne ; Singhal, Sameer ; Hanson, Allen ; Martin, Quinn ; Piner, Edwin L. ; Linthicum, Kevin J. ; Kizilyalli, Isik C.
fYear :
2007
fDate :
14-17 Oct. 2007
Firstpage :
1
Lastpage :
4
Keywords :
Aluminum gallium nitride; Costs; Gallium arsenide; Gallium nitride; HEMTs; Pulse amplifiers; Radio frequency; Silicon; Substrates; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR, USA
Print_ISBN :
978-1-4244-1022-4
Type :
conf
DOI :
10.1109/CSICS07.2007.11
Filename :
4384391
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2130170
