A 40W GaN HEMT Doherty Power Amplifier with 48% Efficiency for WiMAX Applications

Author

Sano, Hiroaki ; Ui, Norihiko ; Sano, Seigo

Author_Institution

Eudyna Devices Inc., Yokohama

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

A 40W GaN HEMT Doherty power amplifier (PA) for 2.5GHz band was developed. The Doherty PA was designed using large signal GaN HEMT models, and demonstrated a saturation output power of 54dBm (250W) and a drain efficiency of more than 60%. The measurement result shows good agreement with the large signal simulation result. We also investigated the Doherty PA linearity with digital pre-distortion (DPD) system, and obtained a drain efficiency of 48%, an ACLR of -53dBc and a power gain of 13.4dB at the average output power of 46dBm (40W) with 64QAM modulation signal. These superior performances show good suitability for 2.5GHz band WiMAX base stations.

Keywords

III-V semiconductors; UHF power amplifiers; WiMax; gallium compounds; power HEMT; quadrature amplitude modulation; 64QAM; Doherty PA linearity; GaN; GaN HEMT Doherty power amplifier; WiMAX; digital predistortion system; drain efficiency; efficiency 48 percent; frequency 2.5 GHz; gain 13.4 dB; power 250 W; power 40 W; saturation output power; Base stations; Digital modulation; Gallium nitride; HEMTs; Linearity; Power amplifiers; Power generation; Power system modeling; Signal design; WiMAX;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.15

Filename

4384395