Statistical Large-Signal Model Enabling Yield Optimization in High-Power Amplifier Design

Author

Stiebler, Wolfram ; Kolias, Patricia ; Sanctuary, Jay

Author_Institution

Raytheon RF Components, Andover

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

A statistical large-signal model is presented that allows for optimizing yield of high-power amplifier MMICs. The modeling technique is based on the transformation of process control data into modeling parameters of an empirical, compact large-signal device model, followed by a multi-variant statistical analysis, resulting in a full set of principal components for both the current and the charge model. The model component has been implemented into ADS (Agilent) and an automated software periodically updates the statistical model parameters.

Keywords

HEMT integrated circuits; MMIC power amplifiers; integrated circuit design; principal component analysis; Agilent; MMIC; high-power amplifier design; multivariant statistical analysis; process control data; statistical large-signal model; Design optimization; High power amplifiers; MMICs; Phase change materials; Principal component analysis; Process control; Radio frequency; Radiofrequency amplifiers; Robustness; Statistical analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.25

Filename

4384405