DocumentCode :
2130498
Title :
1 volt, 1 GHz nems switches
Author :
Tabib-Azar, M. ; Venumbaka, S.R. ; Alzoubi, K. ; Saab, D.
Author_Institution :
Electr. & Comput. Eng. Dept., Univ. of Utah, Salt Lake City, UT, USA
fYear :
2010
fDate :
1-4 Nov. 2010
Firstpage :
1424
Lastpage :
1426
Abstract :
It is generally accepted that electromechanical switches have superior off-to-on resistance ratios, very low leakage currents, and sub-threshold slope better than 0.1 mV/decade. It is also well-known that these switches tend to have large foot-print, large turn on voltages, low speeds (at best 0.1 0.01 μs switching time) and are relatively unreliable and fail due to contact resistance variations, particulates, fatigue, and stiction. Here we present a class of nano-electromechanical switches with ~ 1 V turn-on voltage, very high speed of <;1 ns, and very small footprint of around 1 μm2.
Keywords :
UHF devices; contact resistance; leakage currents; microswitches; nanoelectromechanical devices; NEMS switches; contact resistance; frequency 1 GHz; leakage currents; nanoelectromechanical switches; voltage 1 V;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Sensors, 2010 IEEE
Conference_Location :
Kona, HI
ISSN :
1930-0395
Print_ISBN :
978-1-4244-8170-5
Electronic_ISBN :
1930-0395
Type :
conf
DOI :
10.1109/ICSENS.2010.5690502
Filename :
5690502
Link To Document :
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