• DocumentCode
    2130699
  • Title

    Influence of alloy composition on the noise behavior of hetero-FETs in millimeter-wave frequency range

  • Author

    Abou-Elnour, Ali ; Schünemann, Klaus

  • Author_Institution
    Technische Universitiÿt Hamburg-Harburg, Arbeitsbereich Hochfrequenztechnik, Wallgraben 55, D-21073 Hamburg, Germany.
  • Volume
    2
  • fYear
    1996
  • fDate
    6-13 Sept. 1996
  • Firstpage
    896
  • Lastpage
    899
  • Abstract
    The noise behavior of millimeter-wave Hetero-FETs is investigated by using a rigorous physical simulator which takes into account non-stationary transport properties and quantization effects to allow better understanding of the origins of the noise fluctuations. The model is applied to determine the effects of Al composition on the 2DEG transport properties and consequently on the noise behavior of Hetero-FETs. The results are compared to those for GaAs MESFETs with 3DEG channel and possibilities to suppress the dominant noise sources at the different frequencies of operation are finally discussed.
  • Keywords
    Fluctuations; Frequency; Gallium arsenide; Microscopy; Millimeter wave technology; Millimeter wave transistors; Noise figure; Noise measurement; Quantization; Semiconductor device noise;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Conference, 1996. 26th European
  • Conference_Location
    Prague, Czech Republic
  • Type

    conf

  • DOI
    10.1109/EUMA.1996.337720
  • Filename
    4138769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2130699