DocumentCode
2130785
Title
A direct extraction method of heterojunction bipolar transistors small signal equivalent circuits based on S-parameters and noise measurements
Author
Spiegel, S J
Author_Institution
Rafael 87, P.Box. 2250, 31021, Haifa, Israel. Tel 00-9724-8794358, Fax 00-9724-8792037
Volume
2
fYear
1996
fDate
6-13 Sept. 1996
Firstpage
906
Lastpage
910
Abstract
A direct extraction method of the HBT small-signal equivalent circuit based on noise figure and s-parameters measurements is presented. The equivalent circuit includes the extrinsic base-collector capacitance and extrinsic base resistance. It is shown that the elementary equivalent circuit with a single base resistance underestimates the noise performance of the device.
Keywords
Capacitance; Circuit noise; Electrical resistance measurement; Equivalent circuits; Heterojunction bipolar transistors; Noise figure; Noise measurement; Optimization methods; Scattering parameters; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1996. 26th European
Conference_Location
Prague, Czech Republic
Type
conf
DOI
10.1109/EUMA.1996.337723
Filename
4138772
Link To Document