An Integrated 19-GHz Low-Phase-Noise Frequency Synthesizer in SiGe BiCMOS Technology

Author

Osmany, Sabbir A. ; Herzel, Frank ; Scheytt, J. Christoph ; Schmalz, Klaus ; Winkler, Wolfgang

Author_Institution

IHP, Frankfurt

fYear

2007

fDate

14-17 Oct. 2007

Firstpage

1

Lastpage

4

Abstract

We present a fully integrated phase-locked loop tunable from 17.5 GHz to 19.2 GHz fabricated in a 0.25 mum SiGe BiCMOS technology. The measured phase noise is below -110 dBc/Hz at 1 MHz offset over the whole tuning range. Based on an integer-N architecture, the synthesizer consumes 248 mW and occupies a chip area of 2.1 mm including pads. Quadrature outputs at quarter of the oscillator frequency are produced, which are required in a sliding-IF 24 GHz transceiver. Possible applications include wireless LAN as well as satellite communication. The measured phase noise is the lowest among previously published Si-based integrated synthesizers above 12 GHz.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC oscillators; frequency synthesizers; phase locked loops; phase noise; semiconductor materials; transceivers; BiCMOS technology; SiGe; frequency 17.5 GHz to 19.2 GHz; frequency 24 GHz; integrated low-phase-noise frequency synthesizer; oscillator frequency; phase-locked loop; satellite communication; size 0.25 mum; transceiver; BiCMOS integrated circuits; Frequency synthesizers; Germanium silicon alloys; Noise measurement; Phase locked loops; Phase measurement; Phase noise; Semiconductor device measurement; Silicon germanium; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE

Conference_Location

Portland, OR

Print_ISBN

978-1-4244-1022-4

Type

conf

DOI

10.1109/CSICS07.2007.44

Filename

4384424