DocumentCode :
2130911
Title :
A Low Noise Ku-Band SiGe Phase Locked Oscillator
Author :
Khalil, Ahmed I. ; Lyons, Chris ; Gao, X. ; Oneill, Chris ; Koechlin, Michael
Author_Institution :
Hittite Microwave Corp., Chelmsford
fYear :
2007
fDate :
14-17 Oct. 2007
Firstpage :
1
Lastpage :
4
Abstract :
A fully integrated 13.3-15.3 GHz phase locked oscillator (PLO) has been developed using an 80 GHz fr SiGe HBT technology. The PLO consists of a push-push VCO, buffers, frequency doubler, 32/64 dual modulus prescaler, a phase frequency detector (PFD) with lock detect, and an operational amplifier. The output power at 15 GHz is 7dBm. The VCO has a respectable phase noise of -96 dBc/Hz at 100KHz offset. The prescaler has an excellent phase noise floor of-162 dBc/Hz at 113 MHz. The noise floor of the PLO is -104 dBc/Hz at 1KHz offset and -110 dBc/Hz at 1MHz offset at a reference frequency of 113 MHz. The PLO has very linear, nearly flat, tuning sensitivity of 650-750 MHz/V across the band.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; operational amplifiers; phase locked oscillators; voltage-controlled oscillators; SiGe; SiGe HBT technology; buffer; frequency 113 MHz; frequency 13.3 GHz to 15.3 GHz; frequency 80 GHz; frequency doubler; low-noise phase locked oscillator; operational amplifier; phase frequency detector; push-push VCO; Germanium silicon alloys; Heterojunction bipolar transistors; Operational amplifiers; Phase detection; Phase frequency detector; Phase noise; Power amplifiers; Power generation; Silicon germanium; Voltage-controlled oscillators;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-1022-4
Type :
conf
DOI :
10.1109/CSICS07.2007.45
Filename :
4384425
Link To Document :
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