DocumentCode
2130987
Title
A high-speed resonance-type FET transceiver switch for millimeter-wave band wireless network
Author
Madihian, M. ; Desclos, L. ; Maruhashi, K. ; Onda, K. ; Kuzuhara, M.
Volume
2
fYear
1996
fDate
6-13 Sept. 1996
Firstpage
941
Lastpage
944
Abstract
This paper concerns with the design consideration, fabrication process, and performance of a CPW monolithic AlGaAs/InGaAs HJFET switch for V-band wireless networks applications. The Switch utilizes a resonance concept in order to either pass, or to block a signal by presenting, respectively, a parallel, or a series resonant circuit to the signal. A developed T/R switch exhibits state-of the art switching-speed and isolation of 250psec and 41dB, respectively, and an insertion loss of 3.9dB ovr V-band frequencies.
Keywords
Coplanar waveguides; FETs; Fabrication; Indium gallium arsenide; Process design; Resonance; Switches; Switching circuits; Transceivers; Wireless networks;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Conference, 1996. 26th European
Conference_Location
Prague, Czech Republic
Type
conf
DOI
10.1109/EUMA.1996.337731
Filename
4138780
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