Title :
A Current-Mirror-Based GaAs-HBT RF Power Detector for Wireless Applications
Author :
Yamamoto, Kazuya ; Miyashita, Miyo ; Kurusu, Hitoshi ; Ogawa, Nobuyuki ; Shimura, Teruyuki
Author_Institution :
Mitsubishi Electr. Corp., Itami
Abstract :
This paper describes circuit design and measurement results of a newly developed GaAs-HBT RF power detector for use in wireless applications. The detector features logarithm-like, frequency-independent characteristics. The detector can be also driven with small input power levels, enabling base-terminal monitor which can utilize directivity of a power stage. Since a unique current-mirror-based topology is successfully employed for realizing these features, the detector is easy to implement on a GaAs HBT power amplifier. Measurement results of a prototype detector fabricated with a single-stage amplifier on the same die are as follows. The detector can deliver a detection voltage of 0.4-2.5 V and its slope of less than 0.17 V/dB over a 2-22-dBm output power range at 3.5 GHz while drawing a current of less than 1.8 mA from a 2.85-V supply. The detector is also capable of suppressing voltage dispersion within 50 mV over a 3.1-3.9-GHz wide frequency range operation, and this dispersion is less than one-seventh of that of a conventional collector-terminal-monitor type diode detector.
Keywords :
III-V semiconductors; electric sensing devices; gallium arsenide; heterojunction bipolar transistors; mirrors; power amplifiers; semiconductor device measurement; wireless LAN; GaAs; HBT RF power detector; HBT power amplifier; base-terminal monitor; circuit design; current-mirror based topology; frequency 3.1 GHz to 3.9 GHz; frequency-independent characteristics; hoterojunction bipolar transistors; power stage directivity; single-stage amplifier; voltage 0.4 V to 2.5 V; voltage 2.85 V; voltage 50 mV; voltage dispersion; wireless LAN; wireless applications; Circuit synthesis; Circuit topology; Computer vision; Detectors; Gallium arsenide; Monitoring; Power amplifiers; Power measurement; Radio frequency; Voltage;
Conference_Titel :
Compound Semiconductor Integrated Circuit Symposium, 2007. CSIC 2007. IEEE
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4244-1022-4
DOI :
10.1109/CSICS07.2007.52